PART |
Description |
Maker |
19160-0009 |
Assorted PVC Insulated Quick Disconnect, Ring, Spade and Butt Splice Terminals.
|
MolexKits
|
64001-1400 64001-1500 19023-0012 64001-4700 19070- |
Assorted PVC Insulated Quick Disconnect, Ring, Spade and Butt Splice Terminals.
|
MolexKits http://
|
19141-0085 19069-0219 19044-0031 19044-0066 19044- |
Assorted Non-Insulated Quick Disconnect, Ring, Spade and Butt Splice Solderless Terminals
|
MolexKits
|
76650-0043 19144-0042 19160-0012 64001-1400 64001- |
Assorted PVC Insulated Quick Disconnect, Ring, Spade, Butt Splice and Multi-Lock Terminals.
|
MolexKits http://
|
19025-0002 19025-0008 64001-1400 64001-1700 64001- |
.187 Tab Size Nylon Insulated and Fully Insulated Quick Disconnect Solderless Terminals
|
MolexKits
|
CM1200HA-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
CW3HCT52A103F CW3NILCT52A103F CW3PCT52A103F CW12SC |
coat insulated, precision coat insulated and miniature wirewound leaded resistors
|
KOA Speer Electronics, Inc. KOA Speer Electronics, ...
|
BCR16B BCR16C BCR16E |
MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Sem... Mitsubishi Electric Corporation
|
QM75DY-24B |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|
GT40G121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
SSM25G45EM |
N-CHANNEL INSULATED-GATE BOPOLAR TRANSISTOR N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR
|
List of Unclassifed Manufacturers ETC[ETC] Silicon Standard Corp.
|
IRG4BC29F IRG4BC30F IRG4BC30 |
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.59V,@和VGE \u003d 15V的,集成电路\u003d 17A条)
|
IRF[International Rectifier] International Rectifier, Corp.
|